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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EFM101B THRU EFM106B SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.09 gram DO-214AA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 15 -65 to + 175 EFM101B EFM102B EFM103B EFM104B EFM105B EFM106B 50 35 50 100 70 100 150 105 150 1.0 30 10 200 140 200 300 210 300 400 280 400 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @TA = 25 o C @TA =100 o C SYMBOL VF IR trr EFM101B EFM102B EFM103B EFM104B EFM105B EFM106B 0.95 1.25 5.0 uAmps 100 35 nSec 2004-12 REV.A UNITS Volts Mounting Pad Layout 0.106 MAX. (2.69 MAX.) 0.083 MIN. (2.10 MIN.) 0.050 MIN. (1.27 MIN.) 0.220 REF Dimensions in inches and (millimeters) RECTRON |
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